N-plane sapphire wafers are not as common as C-plane (0001), A-plane (11-20) or R-plane (1-102) wafers. Research shows that for AlN grown on A-plane(11-20) sapphire, the N-plane(11-23) epitaxial relationship between AlN and sapphire changed with nitridation temperature in the initial stage of growth, but it remained constant for AlN grown on N-plane sapphire.
Other films, such as ZnTe epilayers can be grown on N-plane (11-23) sapphire wafers by molecular beam epitaxy.
Item | 2-inch N-plane(11-23) 430μm Sapphire Wafers | |
Crystal Materials | 99,999%, High Purity, Monocrystalline Al2O3 | |
Grade | Prime, Epi-Ready | |
Surface Orientation | N-plane(11-23) | |
Diameter | 50.8 mm +/- 0.1 mm | |
Thickness | 430 μm +/- 25 μm | |
Primary Flat Orientation | A-plane(11-20) +/- 0.2° | |
Primary Flat Length | 16.0 mm +/- 1.0 mm | |
Single Side Polished | Front Surface | Epi-polished, Ra < 0.5 nm (by AFM) |
(SSP) | Back Surface | Fine ground, Ra = 0.8 μm to 1.2 μm |
Double Side Polished | Front Surface | Epi-polished, Ra < 0.5 nm (by AFM) |
(DSP) | Back Surface | Epi-polished, Ra < 0.5 nm (by AFM) |
TTV | < 10 μm | |
BOW | < 10 μm | |
WARP | < 10 μm | |
Cleaning / Packaging | Class 100 cleanroom cleaning and vacuum packaging, | |
25 pieces in one cassette packaging or single piece packaging. |
Note: Custom sapphire substrates and wafers with any orientation and any thickness can be provided.