CRYSCORE can offer Epi-Ready grade sapphire wafer with a very low surface roughness in complete orientation options.
C-plane(0001) sapphire wafers are being extensively used for epitaxial growth of III-V and II-VI compounds, such as gallium nitride (GaN), aluminum nitride (AlN), for bright blue and green LED and laser diodes.
C-plane sapphire wafers are widely used to grow III-V and II-VI deposited films of wide band-gap nitride and oxide semiconductor materials such as gallium nitride (GaN), aluminum nitride (AlN), indium nitride (InN), zinc oxide (ZnO ultraviolet light emission) and tin oxide (SnO2 ultraviolet luminescent material), etc.
In addition, standard C-plane(0001) sapphire wafers are widely applied to fabricate LED white and blue light, ultraviolet and deep UV LED epitaxial wafers by Metal-Organic Vapor Deposition(MOCVD), Molecular Beam Epitaxy (MBE), Plasma Enhanced Chemical Vapor Deposition(PECVD) and other epitaxy growth methods.
CRYSCORE standard sapphire wafers also are used as the substrates of heterojunction bipolar transistor (HBT), a laser diode (LD), UV detector, nanotube, and the heat dissipation material of high temperature and high power high-frequency electronic device.
99.999 % high purity single crystal Al2O3 material.
Special CMP (Chemical Mechanical Polishing) technology to ensure its performance at a low cost.
Excellent surface quality in all orientations (less than 0.2 nm for C-plane, less than 0.5 nm for A-plane, M-plane, R-plane, N-plane, V-plane, 10-14, etc.)
Cleaned in class 100 cleanroom by ultrapure water with quality above 18MΩ *cm.
25 pcs a pack or single pack is available to maximize customer flexibility in their research.
Traceable product serial number.
Compact carton packaging for safer shipping and cost-saving.
Standard wafers are Generally in stock to ensure a quick delivery.
As a professional sapphire wafer supplier, CRYSCORE aims to provide customers with the best products and services, and let our technology benefits the world.