Kyropoulos method (Kyropoulos method) was invented by Kyropoul s in 1926, after decades of continuous transformation and improvement by scientific researchers. The principle and technical characteristics of the crystal growth are: put the crystal raw material into a high temperature crucible and heat it to melt, adjust the temperature field in the furnace to make the upper part of the melt slightly higher than the melting point; make the seed crystal on the seed rod contact Melting liquid level, after the surface is slightly melted, reduce the surface temperature to the melting point, pull and rotate the seed rod, so that the top of the melt is in a supercooled state and crystallizes on the seed crystal. In the process of being continuously lifted, it grows into cylindrical crystals, called sapphire ingot.
(1) Crystal diameter
When expanding the shoulders, the crystal diameter with the former way is larger, and sapphire crystals with a diameter of more than 100mm can generate, while with the latter method it is somewhat difficult;
(2) Crystal orientation
The former has greater advantages for growing large-sized, directional sapphire crystals;
(3) Crystal quality
The Kyropoulos growth system has the best temperature gradient suitable for the growth of sapphire crystals. During or at the end of the growth process, the crystal is not in contact with the crucible, which greatly reduces its stress, and can obtain high-quality large crystals. The defect density is much lower than that of the crystal grown by the Czochralski method, and the shape of the crystal grown by the two is also different.
CRYSCORE OPTOELECTRONIC LIMITED is a manufacturer of sapphire ingots. The sapphire ingots we sell are of good quality and are worth your purchase!
